New 4.5kV High Power Flat-Packaged IGBTs

Recently, high-voltage and high power IGBTs (insulated gate bipolar transistors) have been increasingly used in industrial fields, and in tractions and transformer facilities, where GTO (gate turn-off) thyristors were generally used in the past. The major reasons for the increase in IGBT applications are because, compared to GTO thyristors, IGBTs have the advantage of being easier to handle due to their voltage driving method and also have a wider safeoperating-area characteristic. Large-scale and highly public systems require high reliability of their mechanical and electrical characteristics. To meet this requirement, Fuji Electric has developed highly reliable 2.5kV-1.0kA and 2.5kV1.8kA flat-packaged IGBTs, and has promoted their application to industrial or traction systems. These flat-packaged IGBT devices have achieved long-term high reliability of their mechanical characteristics. Their high resistance to rupture and distinctive flatpackaged structure allow them to be easily applied to equipment through series connections. As use of IGBT applications expand, IGBT devices with higher voltage and higher power are being required. By further developing the technology of the 2.5kV flat-packaged IGBT, Fuji Electric has developed higher voltage and higher power 4.5kV-2.0kA and 4.5kV-1.2kA flat-packaged IGBT devices. This paper presents an overview of the device design and electrical characteristics of the above flatpackaged IGBT devices.